Epitaxial growth of aluminum on silicon substrates by metalorganic molecular beam epitaxy using dimethyl-ethylamine alane

In this paper, the growth process of aluminum on a silicon substrate by metalorganic molecular beam epitaxy using dimethylethylamine alane has been described. The crystallographic orientation of the aluminum grains strongly depends on the substrate temperature. The epitaxial single crystalline (111) Al grains grow on a(lll) Si substrate at a substrate temperature between 450 and 500 degrees C. The bi-crystalline (110) Al grains grow on a (100) Si substrate at the substrate temperature between 350 and 450 degrees C. For a (100) Si substrate, the orientation of Al is related to the reconstruction of the Si substrate. Furthermore, the selective growth of Al into 1.5-mu m-diameter via-holes is shown to be possible.