Visualization of defect densities in reduced graphene oxide

被引：495

作者：

Eigler, Siegfried ^{[1
]}

Dotzer, Christoph

Hirsch, Andreas

机构：

[1] Univ Erlangen Nurnberg, Dept Chem & Pharm, D-91054 Erlangen, Germany

来源：

CARBON | 2012年 / 50卷 / 10期

基金：

欧洲研究理事会;

关键词：

GRAPHITE; REDUCTION;

D O I：

10.1016/j.carbon.2012.03.039

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Efficiently reducible graphene oxide (GO) was obtained, even if a high degree of functionalization is present. Graphite with few defects was used as starting material and oxidized according to Hummer's method. An extremely high I-D/I-G ratio for rGO of 2.8 (532 nm) was observed in the Raman spectrum as a consequence of the lower defect density in GO. It was also possible to demonstrate the impact of local defects on the structure in rGO by local laser exposure experiments on single graphene oxide flakes. Raman spectroscopy can visualize the laser impact by I-D/I-G ratio measurements. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：3666 / 3673

页数：8

共 27 条

[1] The Role of Intercalated Water in Multilayered Graphene Oxide [J].

Acik, Muge ;

Mattevi, Cecilia ;

Gong, Cheng ;

Lee, Geunsik ;

Cho, Kyeongjae ;

Chhowalla, Manish ;

Chabal, Yves J. .

ACS NANO, 2010, 4 (10) :5861-5868

[2] The Potential of Perylene Bisimide Derivatives for the Solubilization of Carbon Nanotubes and Graphene [J].

Backes, Claudia ;

Hauke, Frank ;

Hirsch, Andreas .

ADVANCED MATERIALS, 2011, 23 (22-23) :2588-2601

[3] Functional Composite Materials Based on Chemically Converted Graphene [J].

Bai, Hua ;

Li, Chun ;

Shi, Gaoquan .

ADVANCED MATERIALS, 2011, 23 (09) :1089-1115

[4] Ultrahigh electron mobility in suspended graphene [J].

Bolotin, K. I. ;

Sikes, K. J. ;

Jiang, Z. ;

Klima, M. ;

Fudenberg, G. ;

Hone, J. ;

Kim, P. ;

Stormer, H. L. .

SOLID STATE COMMUNICATIONS, 2008, 146 (9-10) :351-355

[5] The effect of the parent graphite on the structure of graphene oxide [J].

Botas, Cristina ;

Alvarez, Patricia ;

Blanco, Clara ;

Santamaria, Ricardo ;

Granda, Marcos ;

Ares, Pablo ;

Rodriguez-Reinoso, Francisco ;

Menendez, Rosa .

CARBON, 2012, 50 (01) :275-282

[6] Quantifying Defects in Graphene via Raman Spectroscopy at Different Excitation Energies [J].

Cancado, L. G. ;

Jorio, A. ;

Martins Ferreira, E. H. ;

Stavale, F. ;

Achete, C. A. ;

Capaz, R. B. ;

Moutinho, M. V. O. ;

Lombardo, A. ;

Kulmala, T. S. ;

Ferrari, A. C. .

NANO LETTERS, 2011, 11 (08) :3190-3196

[7] Intrinsic and extrinsic performance limits of graphene devices on SiO2 [J].

Chen, Jian-Hao ;

Jang, Chaun ;

Xiao, Shudong ;

Ishigami, Masa ;

Fuhrer, Michael S. .

NATURE NANOTECHNOLOGY, 2008, 3 (04) :206-209

[8] One-pot reduction of graphene oxide at subzero temperatures [J].

Cui, Peng ;

Lee, Junghyun ;

Hwang, Eunhee ;

Lee, Hyoyoung .

CHEMICAL COMMUNICATIONS, 2011, 47 (45) :12370-12372

[9] Partially oxidized graphene as a precursor to graphene [J].

Eda, Goki ;

Ball, James ;

Mattevi, Cecilia ;

Acik, Muge ;

Artiglia, Luca ;

Granozzi, Gaetano ;

Chabal, Yves ;

Anthopoulos, Thomas D. ;

Chhowalla, Manish .

JOURNAL OF MATERIALS CHEMISTRY, 2011, 21 (30) :11217-11223

[10]

Eigler S, CHEM MAT

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