Piezoelectric photoacoustic studies of optical recovery of metastable states related to EL2 and EL6 levels in semi-insulating GaAs

被引：18

作者：

Fukuyama, A

Akashi, Y

Yoshino, K

Maeda, K

Ikari, T

机构：

[1] Miyazaki Univ, Dept Mat Sci, Miyazaki 88921, Japan

[2] Miyazaki Univ, Dept Elect & Elect Engn, Miyazaki 88921, Japan

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.58.12868

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Effect of secondary-light illuminations of h nu= 0.9 and 1.45 eV on photoquenched and photoenhanced states in semi-insulating GaAs are investigated using piezoelectric photoacoustic (PPA) measurements at 80 K. It is found that the secondary-light illuminations of 0.9 and 1.45 eV cause an optical recovery of the PPA signal from EL2* to EL2(0). We observed an appearance of a broad band at 0.8-1.0 eV in the PPA spectrum after the secondary-light illumination of 0.9 eV. The most important finding is that the PPA spectra after the secondary light illumination of 0.9 eV both on the photoquenched and on the photoenhanced states are the same in the whole photon-energy region. We conclude that the secondary-light of h nu=0.9 eV induces both an optical recovery and a generation of metastable state of the EL6 level at the same time. The different rates for the transformation of these two processes explain well the observed complex natures of the PPA signal under the secondary-light illumination. [S0163-1829 (98)04343-4].

引用

页码：12868 / 12875

页数：8

共 10 条

[1] DEEP-LEVEL OPTICAL SPECTROSCOPY IN GAAS [J].

CHANTRE, A ;

VINCENT, G ;

DUBOIS .

PHYSICAL REVIEW B, 1981, 23 (10) :5335-5359

[2] PHOTON-INDUCED RECOVERY OF PHOTOQUENCHED EL2 INTRACENTER ABSORPTION IN GAAS [J].

FISCHER, DW .

APPLIED PHYSICS LETTERS, 1987, 50 (24) :1751-1753

[3] Effect of the carbon acceptor concentration on the photoquenching and following enhancement of the photoacoustic signals of semi-insulating GaAs [J].

Fukuyama, A ;

Morooka, Y ;

Akashi, Y ;

Yoshino, K ;

Maeda, K ;

Ikari, T .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (11) :7567-7574

[4] SPATIAL-DISTRIBUTION OF EL2 IN GAAS WAFER DETERMINED BY PHOTOACOUSTIC-SPECTROSCOPY [J].

FUKUYAMA, A ;

IKARI, T ;

MAEDA, K ;

FUTAGAMI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (5B) :2567-2569

[5] NEAR-INFRARED PHOTOACOUSTIC SPECTRA OF DEEP LEVELS IN GAAS GROWN BY LIQUID ENCAPSULATED CZOCHRALSKI METHOD [J].

FUKUYAMA, A ;

IKARI, T ;

MIYAZAKI, K ;

MAEDA, K ;

FUTAGAMI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 :20-22

[6] LOW-TEMPERATURE PHOTOACOUSTIC SPECTRA OF BII3 SINGLE-CRYSTALS [J].

IKARI, T ;

SHIGETOMI, S ;

KOGA, Y ;

NISHIMURA, H ;

YAYAMA, H ;

TOMOKIYO, A .

PHYSICAL REVIEW B, 1988, 37 (02) :886-890

[7] OPTICAL QUENCHING OF THE EXTRINSIC LIGHT-INDUCED ENHANCED PHOTOCURRENT IN SEMI-INSULATING GAAS [J].

JIMENEZ, J ;

ALVAREZ, A ;

GONZALEZ, MA ;

BONNAFE, J ;

DESAJA, JA .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (10) :1841-1844

[8] OPTICALLY INDUCED EXCESS HOLE POPULATION IN SEMI-INSULATING GAAS [J].

JIMENEZ, J ;

ALVAREZ, A ;

BONNAFE, J .

PHYSICAL REVIEW B, 1990, 42 (18) :11762-11767

[9] QUENCHING AND RECOVERY CHARACTERISTICS OF THE EL2 DEFECT IN GAAS UNDER MONOCHROMATIC-LIGHT ILLUMINATION [J].

MANASREH, MO ;

FISCHER, DW .

PHYSICAL REVIEW B, 1989, 40 (17) :11756-11763

[10]

OTOKI Y, 1986, P 4 C SEM 3 5 MAT HA, P285

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