Infrared (3.8 μm) interband cascade light-emitting diode array with record high efficiency -: art. no. 041105

被引：31

作者：

Das, NC

Olver, K

Towner, F

Simonis, G

Shen, H

机构：

[1] USA, Res Lab, Microphoton Branch, Adelphi, MD 20783 USA

[2] USA, Res Lab, IR Mat Branch, Adelphi, MD 20783 USA

[3] Maxion Technol, Hyattsville, MD 20782 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 04期

关键词：

D O I：

10.1063/1.2001759

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report here the light emission from IR interband-cascade (IC) type-II-superlattice light-emitting diode (LED) structures. We employed two different IC epitaxial structures consisting of 9 or 18 periods of active superlattice gain regions separated by multilayer injection regions. The light output (and the voltage drop) of the LEDs is observed to increase as expected with increase in the number of IC active regions. The 18-period LEDs are found to have 0.65% and 2.8% external efficiency at room temperature and liquid nitrogen temperature respectively. An increase of light intensity by 6 times is observed by thinning the GaSb substrates from 500 mu m to 25 mu m. Another 10% increase is observed using a linear grating on the top surface of the device. (c) 2005 American Institute of Physics.

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页数：3

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