Electronic structure of Bi4Ti3O12 thin film by soft-X-ray emission spectroscopy

被引：18

作者：

Higuchi, T

Tanaka, M

Kudoh, K

Takeuchi, T

Harada, Y

Shin, S

Tsukamoto, T

机构：

[1] Sci Univ Tokyo, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, Japan

[2] RIKEN, Hyogo 6795148, Japan

[3] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 9B期

关键词：

Bi4Ti3O12 thin film; SXES; valence band; hybridization effect; soft-X-ray Raman scattering;

D O I：

10.1143/JJAP.40.5803

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic structure of a ferroelectric Bi4Ti3O12 (BIT) thin film was investigated by soft-X-ray emission spectroscopy (SXES). In the valence band energy region, Ti 3d and O 2p partial density of states were observed in O Is and Ti 2p SXES spectra. The energy position of the Ti 3d state overlapped with that of the 0 2p state. This finding indicates that the 0 2p state strongly hybridizes with the Ti 3d state in the valence band.

引用

页码：5803 / 5805

页数：3

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