Low resistive ohmic contact formation on surface treated-n-GaN alloyed at low temperature

被引：28

作者：

Lin, YJ ^{[1
]}

Lee, HY ^{[1
]}

Hwang, FT ^{[1
]}

Lee, CT ^{[1
]}

机构：

[1] Natl Cent Univ, Inst Opt Sci, Chungli 32054, Taiwan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2001年 / 30卷 / 05期

关键词：

gallium nitride; ohmic contacts; specific contact resistance; surface treatment;

D O I：

10.1007/s11664-001-0094-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ohmic contacts to n-type GaN with low contact resistance were developed lay (NH4)(2)S-x and KOH+(NH4)(2)S-x surface treatments prior to Ti/Al metal deposition The lowest specific contact resistance of 3.0 x 10(-6) Ohm -cm(2) was obtained for Ti/Al contacts in an (NH4)(2)S-x-treated GaN layer alloyed at 300 degreesC for 3 min. To obtain the lowest specific contact resistance for a low temperature alloy, the (NH4)(2)S-x treatment conditions for both (NH4)(2)S-x and KOH+(NH4)(2)S-x-treated n-GaN layers have been investigated and the mechanism for ohmic formation in low temperature alloys analyzed.

引用

页码：532 / 537

页数：6

共 27 条

[1]

AMANO H, 1989, JPN J APPL PHYS, V73, pL212

[2] THE THERMAL-STABILITY OF AL/TI-TA METALLIZATION ON SI [J].