Temperature-dependent facet development in the deposition of GaInP on non-planar surfaces

被引：1

作者：

Bastos, PL ^{[1
]}

Anders, MJ ^{[1
]}

Bongers, MMG ^{[1
]}

Schermer, JJ ^{[1
]}

Giling, LJ ^{[1
]}

机构：

[1] CATHOLIC UNIV NIJMEGEN,MAT RES INST,DEPT EXPT SOLID STATE PHYS 3,NL-6525 ED NIJMEGEN,NETHERLANDS

来源：

SURFACE SCIENCE | 1997年 / 370卷 / 2-3期

关键词：

alloys; chemical vapor deposition; computer simulations; epitaxy; faceting; phosphine; scanning electron microscopy (SEM); semiconducting films; semiconducting surfaces; semiconductor-semiconductor thin film structures; single crystal epitaxy; solid-gas interfaces; stepped single crystal surfaces; surface energy; surface relaxation and reconstruction;

D O I：

10.1016/S0039-6028(96)00965-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The low-pressure (20 mbar) organometallic vapour-phase epitaxy (LP-OMVPE) of GaInP on non-planar {001} GaAs substrates has been examined. The encountered {<(hh)over bar k>}A(k>h) and {1(1) over bar0$} faceting features develop along the bottom corner and the top edge configurations of the inverted and dovetail grooves, respectively. At higher temperatures (T greater than or equal to 720 degrees C) these features are no longer present. The results have been compared to computer simulations of surface concentration profiles, whereby the inversely proportional relation between temperature and supersaturation, along with varying growth rate on adjacent surfaces of different crystallographic orientations, is found to be the driving force behind the occurrence of these features. The stability of the observed facets is related to the decrease in dangling-bond densities upon surface reconstruction.

引用

页码：179 / 189

页数：11

共 48 条

[1] ONE-STEP-METALORGANIC-VAPOR-PHASE-EPITAXY-GROWN ALGALNP VISIBLE LASER USING SIMULTANEOUS IMPURITY DOPING [J].