ONE-STEP-METALORGANIC-VAPOR-PHASE-EPITAXY-GROWN ALGALNP VISIBLE LASER USING SIMULTANEOUS IMPURITY DOPING

被引：18

作者：

ANAYAMA, C

SEKIGUCHI, H

KONDO, M

SUDO, H

FUKUSHIMA, T

FURUYA, A

TANAHASHI, T

机构：

[1] Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 13期

关键词：

D O I：

10.1063/1.110699

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated a GaInP/AlGaInP visible laser with a real-index guide structure by one-step metalorganic vapor phase epitaxy using simultaneous impurity doping. We achieved an effective self-aligned current-confinement structure in the AlGaInP cladding layer and a threshold current of only 18 mA. The laser had stable transverse-mode oscillation with a beam astigmatism less than 1 mum.

引用

页码：1736 / 1738

页数：3

共 13 条

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