Coulomb blockade in Sb nanocrystals formed in thin, thermally grown SiO2 layers by low-energy ion implantation

被引：50

作者：

Nakajima, A

Nakao, H

Ueno, H

Futatsugi, T

Yokoyama, N

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430199, Japan

[2] Osaka Univ, Fac Engn, Dept Elect Engn, Suita, Osaka 5650871, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 08期

关键词：

D O I：

10.1063/1.122087

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Sb nanocrystals were formed in thin, thermally grown SiO2 layers using low-energy ion implantation followed by thermal annealing. These Sb nanocrystals have good size and position uniformity. Both the narrow as-implanted profile and the compressive strain that exists near the SiO2/Si interface supposedly contribute to the uniformity. The I-V characteristics of the diode structure show a Coulomb blockade region around 0 V and a Coulomb staircase at 4.2 K. The Coulomb blockade region was observed up to a temperature of 100 K. The technique offers the possibility of developing practical Si-based single-electron devices. (C) 1998 American Institute of Physics. [S0003-6951(98)03934-5].

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页码：1071 / 1073

页数：3

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