A clean GaP(001)4x2/c(8x2) surface structure studied by scanning tunneling microscopy and ion scattering spectroscopy

被引：12

作者：

Naitoh, M

Watanabe, A

Konishi, A

Nishigaki, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 9A期

关键词：

STM; ISS; GaP(001); surface reconstruction; surface structure;

D O I：

10.1143/JJAP.35.4789

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the results of scanning tunneling microscopy and ion scattering spectroscopy investigation on the structure of GaP(001)4 x 2/c(8 x 2) surfaces prepared by ion bombardment and annealing methods. We found that the unit cell of the 4 x 2 structure consists of two Ga dimers with two dimer vacancies and that the atomic separation in the Ga dimer is about 0.27 +/- 0.01 nm.

引用

页码：4789 / 4790

页数：2

共 7 条

[1] SURFACE RECONSTRUCTIONS OF GAAS(100) OBSERVED BY SCANNING TUNNELING MICROSCOPY [J].