Ultralow Switching Energy Ni/GeOx/HfON/TaN RRAM

被引：33

作者：

Cheng, C. H. ^{[1
,2
]}

Chin, Albert ^{[3
]}

Yeh, F. S. ^{[1
,2
]}

机构：

[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Tsing Hua Univ, Inst Elect, Hsinchu 300, Taiwan

[3] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 03期

关键词：

GeO2; HfON; hopping conduction; resistive random access memory (RRAM); IMPROVEMENT; MEMORY;

D O I：

10.1109/LED.2010.2095820

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using stacked covalent-bond-dielectric GeOx on metal-oxynitrideHfON, the Ni/GeOx/HfON/TaN resistive random access memory (RRAM) showed ultralow set power of 0.3 mu W (0.1 mu A at 3 V), reset power of 0.6 nW (-0.3 nA at -1.8 V), fast 20-ns switching time, ultralow 8-fJ switching energy (4-V overstress), and excellent 10(6) cycling endurance. Such excellent performance was reached by using hopping conduction with negative temperature coefficient (TC) rather than the positive TC in metal-oxide RRAM.

引用

页码：366 / 368

页数：3

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