New model for Si(111)-(3 x 1)Li through determination of its surface Si atom density with the use of scanning tunneling microscopy

被引：31

作者：

Hasegawa, S ^{[1
]}

Maruyama, M ^{[1
]}

Hirata, Y ^{[1
]}

Abe, D ^{[1
]}

Nakashima, H ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 567, Japan

来源：

SURFACE SCIENCE | 1998年 / 405卷 / 2-3期

关键词：

lithium; scanning tunneling microscopy; silicon; surface relaxation and reconstruction; surface structure; morphology; roughness and topography;

D O I：

10.1016/S0039-6028(98)00096-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report on surface Si atom density in a Si(111)-(3 x 1)Li structure determined from scanning tunneling microscopy observation. During a Li adsorption process on Si(111) surfaces, the imbalance of surface Si atom density between the clean (7 x 7) and Li-induced (3 x 1) structures causes the nucleation of Si islands. From measurements of the coverage of nucleated islands, we determine surface Si atom density in the Si(111)-(3 x 1)Li as four atoms per (3 x 1) unit cell and propose a structural model accounting for the present results. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：L503 / L508

页数：6

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