Electron-cyclotron-resonance sputtered SrTiO3 thin films

被引：4

作者：

Itsumi, M

Ohfuji, S

Akiya, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1996年 / 35卷 / 9B期

关键词：

SrTiO3; thin films; ECR sputtering; ferroelectric; leakage current;

D O I：

10.1143/JJAP.35.4963

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SrTiO3 thin films deposited by electron-cyclotron-resonance (ECR) plasma sputtering at 400 degrees C are investigated from the viewpoint of leakage current and dielectric breakdown strength. 100-nm-thick SrTiO3 samples with 400 degrees C deposition followed by 400 degrees C oxygen annealing show low leakage current density (on the order of 10(-9) A/cm(2) at 5 V) and high dielectric breakdown strength (> 4 MV/cm). SrTiO3 thin films deposited by ECR sputtering at 400 degrees C are promised for capacitor dielectrics of future 1-giga-bit dynamic-random-access memories.

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页码：4963 / 4966

页数：4

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