Room-temperature operation of ZnSe-active-layer and ZnCdSe-active-layer laser diodes

被引：9

作者：

Okuyama, H

Nakayama, N

Itoh, S

Ikeda, M

Ishibashi, A

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 2B期

关键词：

ZnSe; double heterostructure (DH); laser diode (LD); ZnMgSSe; band-gap shrinkage (band-gap renormalization); band filling; exciton; electron-hole plasma (EHP);

D O I：

10.1143/JJAP.35.1410

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room-temperature operation of a ZnSe-active-layer double-heterostructure laser diode (LD) was observed. The lasing wavelength was 471 nm. The emission energy shift with increasing current is explained by band filling and band-gap shrinkage. The threshold carrier density is calculated to be 4 x 10(18) cm(-3). We conclude that the dominant lasing mechanism of II-VI double heterostructure laser diodes is the recombination of electron-hole plasma. It is also the dominant mechanism in ZnCdSe quantum-well separate-confinement-heterostructure laser diodes. In both types of LD's, the band-gap shrinkage was observed near the threshold.

引用

页码：1410 / 1414

页数：5

共 27 条

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