Diamond power FET concept

被引：6

作者：

Aleksov, A ^{[1
]}

Denisenko, A ^{[1
]}

Käb, N ^{[1
]}

Ebert, W ^{[1
]}

Kohn, E ^{[1
]}

机构：

[1] Univ Ulm, Dept Electron Devices & Circuits, D-89081 Ulm, Germany

来源：

2000 IEEE/CORNELL CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/CORNEL.2000.902548

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper a novel concept for diamond power FETs is presented. This concept is based on a delta -doped active channel using homoepitaxial CVD-layers on 100-oriented single crystals. The channel is controlled by a recessed sub-mum pn-junction gate. Based on technological building blocks developed previously, the structure has been simulated and 13 W/mm RF power are predicted. First fabricated FETs show that the concept is feasible.

引用

页码：266 / 273

页数：8

共 7 条

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