Nitride-based near-ultraviolet LEDs with an ITO transparent contact

被引：58

作者：

Kuo, CH

Chang, SJ ^{[1
]}

Su, Y

Chuang, RW

Chang, CS

Wu, LW

Lai, WC

Chen, JF

Sheu, J

Lo, HM

Tsai, JM

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] Natl Cent Univ, Ctr Opt Sci, Chungli 320, Taiwan

[4] S Epitaxy Corp, Tainan, Taiwan

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 106卷 / 01期

关键词：

ITO; In0.05Ga0.95N/Al0.1Ga0.9N LED; short-period superlattice (SPS);

D O I：

10.1016/j.mseb.2003.09.018

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium tin oxide (ITO) (2300 nm) and Ni (5 nm)/Au (10 nm) films were deposited onto glass substrates, p-GaN layers, n(=)-InGaN/GaN short-period-superlattice (SPS) structures and near-ultraviolet (near-UV) In0.05Ga0.95N/Al0.1Ga0.9N light emitting diodes (LEDs). It was found that ITO on n(+)-SPS structure could provide us an extremely high transparency (i.e. 86.5% at 400nm) and a reasonably small 1.2 x 10(-3) Omega cm(2) specific contact resistance. It was also found that, at 20 mA, the forward voltage of the near-UV LED with ITO on n(+)-SPS upper contact was 3.13 V, which is exactly the same as that of the near-UV LED with Ni/Au on n(+)-SPS upper contact. Furthermore, it was found that we could achieve a 36% larger output power by using such an ITO on n(+)-SPS upper contact. (C) 2003 Elsevier B.V. All rights reserved.

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页码：69 / 72

页数：4

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