Current conduction mechanism and gas adsorption effects on device parameters of the Pt/SnOx/diamond gas sensor

被引:19
作者
Gurbuz, Y [1 ]
Kang, WP [1 ]
Davidson, JL [1 ]
Kerns, DV [1 ]
机构
[1] Vanderbilt Univ, Dept Elect & Comp Engn, Nashville, TN 37235 USA
关键词
diamond; high temperature; microelectronic; sensor;
D O I
10.1109/16.760397
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents the results from analysis and modeling of the gas sensing performance, current conduction and gas detection mechanisms, and adsorption effects on device parameters of a Pt/SnOx/diamond-based gas sensor, The sensor is sensitive and demonstrates high, repeatable, and reproducible reaction. The sensor response in seconds to small concentrations of O-2, CO, and H-2 gases. The current conduction mechanism of the diamond-based CAIS (catalyst/adsorptive-oxide/intrinsic-diamond/semiconductor-diamond) diode was found to be dominated by space charge limited conduction in the forward bias region and tunneling in the reverse bias region, distinctively different from silicon based sensors. While gas adsorption causes a change in the barrier height and tunneling factor, no significant change was observed in the ideality factor over the temperature range investigated. The detection mechanism of the sensor is attributable to the change in occupancy ratio of the oxygen vacancies of the adsorptive oxide layer upon oxygen exposure, increasing the contact potential between adsorptive-oxide and intrinsic-diamond.
引用
收藏
页码:914 / 920
页数:7
相关论文
共 31 条
[1]   OHMIC AND SPACE-CHARGE-LIMITED CONDUCTION IN LEAD PHTHALOCYANINE THIN-FILMS [J].
AHMAD, A ;
COLLINS, RA .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1991, 123 (01) :201-211
[2]  
Arbab A., 1993, SENSOR MATER, V4, P173
[3]   PERFORMANCE OF CARBON MONOXIDE SENSITIVE MOSFETS WITH METAL-OXIDE SEMICONDUCTOR GATES [J].
DOBOS, K ;
ZIMMER, G .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (07) :1165-1169
[5]  
GURBUZ Y, 1997, THESIS VANDERBILT U
[6]  
GURBUZ Y, 1997, IEEE TRANSDUCERS INT, P979
[7]   A NEW HYDROGEN SENSOR USING A POLYCRYSTALLINE DIAMOND-BASED SCHOTTKY DIODE [J].
KANG, WP ;
GURBUZ, Y ;
DAVIDSON, JL ;
KERNS, DV .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (08) :2231-2234
[8]   COMPARISON AND ANALYSIS OF PD-GAAS AND PT-GAAS SCHOTTKY DIODES FOR HYDROGEN DETECTION [J].
KANG, WP ;
GURBUZ, Y .
JOURNAL OF APPLIED PHYSICS, 1994, 75 (12) :8175-8181
[9]   PERFORMANCE ANALYSIS OF A NEW METAL-INSULATOR-SEMICONDUCTOR CAPACITOR INCORPORATED WITH PT-SNO(X) CATALYTIC LAYERS FOR THE DETECTION OF O2 AND CO GASES [J].
KANG, WP ;
KIM, CK .
JOURNAL OF APPLIED PHYSICS, 1994, 75 (08) :4237-4242
[10]   PD-SNOX MIS CAPACITOR AS A NEW TYPE OF O-2 GASEOUS SENSOR [J].
KANG, WP ;
XU, JF ;
LALEVIC, B ;
POTEAT, TL .
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (05) :211-213