Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns

被引:281
作者
Kim, DH [1 ]
Cho, CO
Roh, YG
Jeon, H
Park, YS
Cho, J
Im, JS
Sone, C
Park, Y
Choi, WJ
Park, QH
机构
[1] Seoul Natl Univ, Sch Phys, Seoul 151747, South Korea
[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151747, South Korea
[3] Samsung Adv Inst Technol, Photon Program Team, Suwon 440600, South Korea
[4] Korea Univ, Dept Phys, Seoul 136701, South Korea
关键词
D O I
10.1063/1.2132073
中图分类号
O59 [应用物理学];
学科分类号
摘要
We observed a significant enhancement in light output from GaN-based light-emitting diodes (LEDs) in which two-dimensional photonic crystal (PC) patterns were integrated. Two-dimensional square-lattice air-hole array patterns with a period that varied from 300 to 700 nm were generated by laser holography. Unlike the commonly utilized electron-beam lithographic technique, the holographic method can make patterns over a large area with high throughput. The resultant PC-LED devices with a pattern period of similar to 500 nm had more than double the output power, as measured from the top of the device. The experimental observations are qualitatively consistent with the results of three-dimensional finite-difference-time-domain simulation. (C) 2005 American Institute of Physics.
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页码:1 / 3
页数:3
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