Development of Accurate On-Wafer, Cryogenic Characterization Techniques

被引：26

作者：

Laskar, J. ^{[1
]}

Bautista, J. J. ^{[2
]}

Nishimoto, M. ^{[3
]}

Hamai, M. ^{[3
]}

Lai, R. ^{[3
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[2] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

[3] TRW Elect Syst & Technol Div, Redondo Beach, CA 90278 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1996年 / 44卷 / 07期

关键词：

D O I：

10.1109/22.508659

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Significant advances in the development of high electron mobility field-effect transistors (HEMT's) have resulted in cryogenic, low-noise amplifiers (LNA's) whose noise temperatures are within an order of magnitude of the quantum noise limit (hv/k). Further advances in HEMT technology at cryogenic temperatures may eventually lead to the replacement of maser and superconducting-insulator-superconducting (SIS) front-ends in the 1-100 GHz frequency band. Key to identification of the best HEMT's and optimization of cryogenic LNA's is accurate and repeatable device measurements at cryogenic temperatures. A cryogenic on-wafer noise and scattering parameter measurement system has been developed to provide a systematic investigation of HEMT noise characteristics. In addition, an improved parameter extraction technique has been developed to help understand the relationship between device structure and LNA performance.

引用

页码：1178 / 1183

页数：7

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