Efficient flip-chip InGaN micro-pixellated light-emitting diode arrays: Promising candidates for micro-displays and colour conversion

被引:49
作者
Gong, Z. [1 ]
Gu, E. [1 ]
Jin, S. R. [1 ]
Massoubre, D. [1 ]
Guilhabert, B. [1 ]
Zhang, H. X. [1 ]
Dawson, M. D. [1 ]
Poher, V. [2 ]
Kennedy, G. T. [2 ]
French, P. M. W. [2 ]
Neil, M. A. A. [2 ]
机构
[1] Univ Strathclyde, Inst Photon, Glasgow G4 0NW, Lanark, Scotland
[2] Univ London Imperial Coll Sci Technol & Med, Dept Phys, London SW7 2AZ, England
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1088/0022-3727/41/9/094002
中图分类号
O59 [应用物理学];
学科分类号
摘要
Flip-chip InGaN micro-pixellated LED arrays with high pixel density and improved device performance are presented. The devices, with 64 x 64 elements, each of which have a 20 mu m emission aperture on a 50 mu m pitch, are fabricated with a matrix-addressable scheme at blue ( 470 nm) and UV ( 370 nm) wavelengths, respectively. These devices are then flip-chip bonded onto silicon mounts. Good emission uniformity across the LED array is demonstrated, which can be attributed to the introduced n-metal tracks adjacent to each n-GaN mesa and the p-contact lines running across parallel columns. More importantly, with a flip-chip configuration, the optical power output and the current-handling capability of these new devices are substantially enhanced, due to the improved heat dissipation capability and the increased light extraction efficiency. For instance, each pixel in the flip-chip blue ( respectively UV) LED arrays can provide a maximum power density 43 W cm(-2) ( respectively 6.5 W cm(-2)) at an extremely high current density up to 4000 A cm(-2) before breakdown. These flip-chip devices are then combined with a computer-programmable driver circuit interface to produce high-quality micro-scale displays. Other promising applications of these LEDs, such as colour conversion with quantum dots, are also demonstrated.
引用
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页数:6
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