Studies of Ti- and Ni-germanide Schottky contacts on n-Ge(100) substrates

被引：38

作者：

Han, DD ^{[1
]}

Wang, Y ^{[1
]}

Tian, DY ^{[1
]}

Wang, W ^{[1
]}

Liu, XY ^{[1
]}

Kang, JF ^{[1
]}

Han, RQ ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

MICROELECTRONIC ENGINEERING | 2005年 / 82卷 / 02期

基金：

中国国家自然科学基金;

关键词：

Ni-germanide; Schottky contacts; Ge;

D O I：

10.1016/j.mee.2005.06.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, we investigated fabrication and characteristics of germanides Schottky contacts on germanium. Ti- and Ni-germanides were fabricated on n-Ge(1 0 0) substrates by sputtering metal Ti or Ni on Ge followed by a furnace annealing. The influence of annealing temperature on the electrical properties of Ti- and Ni-germanide on n-Ge(1 0 0) substrates was investigated. The low temperature similar to 300 degrees C annealing helped to obtain the optimized Schottky contact characteristics in both Ti-germanide/Ge and Ni-germanide/Ge substrates contacts. The well-behaved Ti-germanides/n-Ge Schottky contact with 0.34 eV barrier height was obtained by using a 300 degrees C annealing process. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：93 / 98

页数：6

共 14 条

[1]

Chui CO, 2002, IEEE ELECTR DEVICE L, V23, P473, DOI [10.1109/LED.2002.801319, 10.1009/LED.2002.801319]

[2] Performance advantage of Schottky source/drain in ultrathin-body silicon-on-insulator and dual-gate CMOS [J].

Connelly, D ;

Faulkner, C ;

Grupp, DE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (05) :1340-1345

[3] BARRIER HEIGHT MODIFICATION OF METAL GERMANIUM SCHOTTKY DIODES [J].

HAN, CC ;

MARSHALL, ED ;

FANG, F ;

WANG, LC ;

LAU, SS ;

VOREADES, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06) :1662-1666

[4] Characteristics of Schottky contacts on n-type 4H-SiC using IrO2 and RuO2 [J].

Han, SY ;

Lee, JL .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (09) :6159-6166

[5] 50-nm gate Schottky source/drain p-MOSFETs with a SiGe channel [J].

Ikeda, K ;

Yamashita, Y ;

Endoh, A ;

Fukano, T ;

Hikosaka, K ;

Mimura, T .

IEEE ELECTRON DEVICE LETTERS, 2002, 23 (11) :670-672

[6] Erbium silicided n-type Schottky barrier tunnel transistors for nanometer regime applications [J].

Jang, M ;

Lee, S ;

Park, K .

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2003, 2 (04) :205-209

[7]

KEDZIERSKI J, 2000, IEDM TECH DIG, P77

[8] SB-IGFET - AN INSULATED-GATE FIELD-EFFECT TRANSISTOR USING SCHOTTKY BARRIER CONTACTS FOR SOURCE AND DRAIN [J].

LEPSELTER, MP ;

SZE, SM .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (08) :1400-+

[9]

RRITZE M, 2004, IEEE ELECTR DEVICE L, V25, P220

[10] Monte Carlo simulation of Schottky contact with direct tunnelling model [J].

Sun, L ;

Liu, XY ;

Liu, M ;

Du, G ;

Han, RQ .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (06) :576-581

← 1 2 →