50-nm gate Schottky source/drain p-MOSFETs with a SiGe channel

被引：29

作者：

Ikeda, K ^{[1
]}

Yamashita, Y ^{[1
]}

Endoh, A ^{[1
]}

Fukano, T ^{[1
]}

Hikosaka, K ^{[1
]}

Mimura, T ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 11期

关键词：

germano-silicide; heterostructure; MOSFET; Schottky source/drain; SiGe; silicide; silicon-germanium-on-insulator (SGOI);

D O I：

10.1109/LED.2002.805007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose new SiGe channel p-MOSFETs with germano-silicide Schottky source/drains (S/Ds). The Schottky barrier-height (SBH) for SiGe is expected to be low enough to improve the injection of carriers into the SiGe channel and, as a result, current drivability is also expected to improve. In this letter, we demonstrate the proposed Schottky S/D p-MOSFETs down to a 50-nm gate-length. The drain current and transconductance are -339 muA/mum and 285 muS/mum at V-GS = V-DS = -1.5 V, respectively. By increasing the Ge content in the SiGe channel from 30% to 35%, the drive current and transconductance can be improved up to 23% and 18%, respectively. This is partly due to the lower barrier-height for strained Si0.66Ge0.35 channel than those for strained Si0.7Ge0.3 channel device and partly due to the lower effective mass of the holes.

引用

页码：670 / 672

页数：3

共 18 条

[1] Suppression of leakage current in Schottky barrier metal-oxide-semiconductor field-effect transistors [J].