Impact of Fe and Cu contamination on the minority carrier lifetime of silicon substrates

被引：65

作者：

Rotondaro, ALP ^{[1
]}

Hurd, TQ ^{[1
]}

Kaniava, A ^{[1
]}

Vanhellemont, J ^{[1
]}

Simoen, E ^{[1
]}

Heyns, MM ^{[1
]}

Claeys, C ^{[1
]}

机构：

[1] IMEC, B-3001 LOUVAIN, BELGIUM

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1996年 / 143卷 / 09期

关键词：

D O I：

10.1149/1.1837141

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The effects of trace amounts of Fe and Cu in p- and n-type silicon were investigated with microwave photoconductance decay and surface photovoltage. The wafers received controlled amounts of surface contamination of Fe and Cu that are relevant for ultralarge scale integrated technologies. The substrate doping type has a strong impact on the effect of the metallic impurities. Fe, as expected, strongly degrades the minority carrier lifetime of p-type substrates. On the other hand, the impact of Fe on n-type silicon at least one enter of magnitude lower than on p-type. In contrast, Cu is highly detrimental to n-type material, but has no significant impact on the minority carrier properties of p-type silicon for the contamination levels studied.

引用

页码：3014 / 3019

页数：6

共 34 条

[1] INTRINSIC CU GETTERING AT A THERMALLY GROWN SIO2/SI INTERFACE [J].