Experimental determination of current spill-over and its effect on the efficiency droop in InGaN/GaN blue-light-emitting-diodes

被引：46

作者：

Ahn, Byung-Jun ^{[1
]}

Kim, Tae-Soo ^{[1
]}

Dong, Yanqun ^{[1
]}

Hong, Moon-Taek ^{[1
]}

Song, Jung-Hoon ^{[1
]}

Song, Jae-Ho ^{[2
]}

Yuh, Hwan-Kuk ^{[2
]}

Choi, Sung-Chul ^{[2
]}

Bae, Duk-Kyu ^{[2
]}

Moon, Youngboo ^{[2
]}

机构：

[1] Kongju Natl Univ, Dept Phys, Kong Ju 314701, Chungnam, South Korea

[2] THELEDS Co Ltd, Kwangju 54612, South Korea

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 03期

基金：

新加坡国家研究基金会;

关键词：

QUANTUM; POLARIZATION;

D O I：

10.1063/1.3678029

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the experimental determination of current spill-over in InGaN/GaN blue light emitting diodes by measuring the change in the forward current generated by a resonant excitation. To quantify accurately, the absorption of the laser as a function of the forward current was also determined. Two samples that have clearly different behavior of efficiency droop were compared to clarify the relationship between the current spill-over and the efficiency droop. We conclude that the carrier spill-over does occur and can be a significant cause for the efficiency droop but cannot single-handedly account for the efficiency droop. (C) 2012 American Institute of Physics. [doi:10.1063/1.3678029]

引用

页数：4

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