Temperature-dependent electroluminescence intensity in green and blue (In,Ga)N multiple-quantum-well diodes

被引：6

作者：

Jimi, H. ^{[1
]}

Inada, T. ^{[1
]}

Fujiwara, K. ^{[1
]}

机构：

[1] Kyushu Inst Technol, Kitakyushu, Fukuoka 8048550, Japan

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2008年 / 2卷 / 02期

关键词：

D O I：

10.1002/pssr.200701272

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electroluminescence (EL) intensity has been investigated of green and blue (In,Ga)N multiple-quantum-well diodes grown on c-plane sapphire over a wide temperature range and as a function of current between 0,01 mA and 10 mA. The EL intensity of the green diode with p-(Al,Ga)N electron blocking layer does not show low-temperature quenching, especially at low injection levels, previously observed for the blue (In,Ga)N quantum-well diodes. This finding rules out possibilities that the freeze-out of holes at deep Mg acceptor levels and the failure of hole injections through the p-(Al,Ga)N layer are directly responsible for the EL quenching at temperatures below 100 K. Variations of the EL efficiency with current level suggest that capture/escape efficiencies of injected carriers by the wells play an important role for the determination of EL external quantum efficiency. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：50 / 52

页数：3

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