Geiger mode operation of an In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode

被引：35

作者：

Karve, G ^{[1
]}

Zheng, XG

Zhang, XF

Li, XW

Li, N

Wang, SL

Ma, F

Holmes, A

Campbell, JC

Kinsey, GS

Boisvert, JC

Isshiki, TD

Sudharsanan, R

Bethune, DS

Risk, WP

机构：

[1] Univ Texas, Microelect Res Ctr, Dept Elect & Comp Engn, Austin, TX 78712 USA

[2] Spectrolab Inc, Sylmar, CA 91381 USA

[3] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2003年 / 39卷 / 10期

关键词：

avalanche photodiode; Geiger mode; impact ionization; photodetector; photon counting;

D O I：

10.1109/JQE.2003.817244

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-temperature photon counting with gated mode quenching is demonstrated with separate absorption, charge, and multiplication avalanche photodiodes that have an In0.52Al0.48As multiplication layer. A minimum of ten dark counts per second and single-photon detection efficiency of 16% were achieved at 130 K.

引用

页码：1281 / 1286

页数：6

共 20 条

[1] An autocompensating fiber-optic quantum cryptography system based on polarization splitting of light [J].

Bethune, DS ;

Risk, WP .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2000, 36 (03) :340-347

[2] Avalanche photodiodes and quenching circuits for single-photon detection [J].

Cova, S ;

Ghioni, M ;

Lacaita, A ;

Samori, C ;

Zappa, F .

APPLIED OPTICS, 1996, 35 (12) :1956-1976

[3] PHOTON-COUNTING TECHNIQUES WITH SILICON AVALANCHE PHOTODIODES [J].

DAUTET, H ;

DESCHAMPS, P ;

DION, B ;

MACGREGOR, AD ;

MACSWEEN, D ;

MCINTYRE, RJ ;

TROTTIER, C ;

WEBB, PP .

APPLIED OPTICS, 1993, 32 (21) :3894-3900

[4] Photon counting in the 1540-nm wavelength region with a germanium avalanche photodiode [J].

Duraffourg, L ;

Mérolla, JM ;

Goedgebuer, JP ;

Butterlin, N ;

Rhodes, WT .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2001, 37 (01) :75-79

[5] Breakdown probabilities for thin heterostructure avalanche photodiodes [J].

Hayat, MM ;

Sakoglu, Ü ;

Kwon, OH ;

Wang, SL ;

Campbell, JC ;

Saleh, BEA ;

Teich, MC .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2003, 39 (01) :179-185

[6] Performance and design of InGaAs/InP photodiodes for single-photon counting at 1.55 μm [J].

Hiskett, PA ;

Buller, GS ;

Loudon, AY ;

Smith, JM ;

Gontijo, I ;

Walker, AC ;

Townsend, PD ;

Robertson, MJ .

APPLIED OPTICS, 2000, 39 (36) :6818-6829

[7] Waveguide avalanche photodiode operating at 1.55 μm with a gain-bandwidth product of 320 GHz [J].

Kinsey, GS ;

Campbell, JC ;

Dentai, AG .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2001, 13 (08) :842-844

[8] DOUBLE EPITAXY IMPROVES SINGLE-PHOTON AVALANCHE-DIODE PERFORMANCE [J].

LACAITA, A ;

GHIONI, M ;

COVA, S .

ELECTRONICS LETTERS, 1989, 25 (13) :841-843

[9] Single-photon detection beyond 1 mu m: Performance of commercially available InGaAs/InP detectors [J].

Lacaita, A ;

Zappa, F ;

Cova, S ;

Lovati, P .

APPLIED OPTICS, 1996, 35 (16) :2986-2996

[10] Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz [J].

Lenox, C ;

Nie, H ;

Yuan, P ;

Kinsey, G ;

Homles, AL ;

Streetman, BG ;

Campbell, JC .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (09) :1162-1164

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