Waveguide avalanche photodiode operating at 1.55 μm with a gain-bandwidth product of 320 GHz

被引：103

作者：

Kinsey, GS ^{[1
]}

Campbell, JC

Dentai, AG

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

[2] Lucent Technol, Crawford Hill Lab, Holmdel, NJ 07733 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2001年 / 13卷 / 08期

关键词：

avalanche photodiodes; gain-bandwidth product; noise; optical fiber devices; photodetectors; waveguides;

D O I：

10.1109/68.935822

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An In0.52Al0.48 As-In-0.53 Ga0.47As waveguide avalanche photodiode with a record gain-bandwidth product of over 320 GHz has been demonstrated. A bandwidth of 28 GHz was achieved at low gains with low excess noise and a quantum efficiency of 16% at 1.55 mum.

引用

页码：842 / 844

页数：3

共 11 条

[1] OPTICAL-ABSORPTION COEFFICIENT OF IN1-XGAXAS/INP [J].

BACHER, FR ;

BLAKEMORE, JS ;

EBNER, JT ;

ARTHUR, JR .

PHYSICAL REVIEW B, 1988, 37 (05) :2551-2557

[2] Waveguide AlInAs/GaAlInAs avalanche photodiode with a gain-bandwidth product over 160GHz [J].

Cohen-Jonathan, C ;

Giraudet, L ;

Bonzo, A ;

Praseuth, JP .

ELECTRONICS LETTERS, 1997, 33 (17) :1492-1493

[3] TRAVELING-WAVE PHOTODETECTORS WITH 172-GHZ BANDWIDTH AND 76-GHZ BANDWIDTH-EFFICIENCY PRODUCT [J].

GIBONEY, KS ;

NAGARAJAN, RL ;

REYNOLDS, TE ;

ALLEN, ST ;

MIRIN, RP ;

RODWELL, MJW ;

BOWERS, JE .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (04) :412-414

[4]

GUPTA MC, 1996, HDB PHOTONICS, P12

[5] MEASUREMENT OF ABSORPTION-COEFFICIENTS OF GA0.47IN0.53AS OVER THE WAVELENGTH RANGE 1.0-1.7-MU-M [J].

HUMPHREYS, DA ;

KING, RJ ;

JENKINS, D ;

MOSELEY, AJ .

ELECTRONICS LETTERS, 1985, 21 (25-2) :1187-1189

[6] MULTIGIGABIT-PER-SECOND AVALANCHE PHOTODIODE LIGHTWAVE RECEIVERS [J].

KASPER, BL ;

CAMPBELL, JC .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1987, 5 (10) :1351-1364

[7] 110-GHZ, 50-PERCENT-EFFICIENCY MUSHROOM MESA WAVE-GUIDE P-I-N PHOTODIODE FOR A 1.55-MU-M WAVELENGTH [J].

KATO, K ;

KOZEN, A ;

MURAMOTO, Y ;

ITAYA, Y ;

NAGATSUMA, T ;

YAITA, M .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (06) :719-721

[8] Waveguide In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode [J].

Kinsey, GS ;

Hansing, CC ;

Holmes, AL ;

Streetman, BG ;

Campbell, JC ;

Dentai, AG .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (04) :416-418

[9] 65 GHz InGaAs/InAlGaAs/InP waveguide-integrated photodetectors for the 1.3-1.55 μm wavelength regime [J].

Kollakowski, S ;

Strittmatter, A ;

Dröge, E ;

Böttcher, EH ;

Bimberg, D ;

Reimann, O ;

Janiak, K .

APPLIED PHYSICS LETTERS, 1999, 74 (04) :612-614

[10] Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz [J].

Lenox, C ;

Nie, H ;

Yuan, P ;

Kinsey, G ;

Homles, AL ;

Streetman, BG ;

Campbell, JC .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (09) :1162-1164

← 1 2 →