Waveguide In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode

被引：29

作者：

Kinsey, GS ^{[1
]}

Hansing, CC

Holmes, AL

Streetman, BG

Campbell, JC

Dentai, AG

机构：

[1] Univ Texas, Microelect Res Ctr, Dept Elect & Comp Engn, Austin, TX 78712 USA

[2] Lucent Technol, Crawford Hill Lab, Holmdel, NJ 07733 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 04期

基金：

美国国家科学基金会;

关键词：

avalanche photodiode; InAlAs; InGaAs; optical fiber systems; photodetector;

D O I：

10.1109/68.839037

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-speed waveguide In0.53Ga0.47As-In-0.52 Al0.48As Separate absorption, charge, and multiplication avalanche photodiode suitable for operation at 1.55 mu m has been demonstrated. A unity-gain bandwidth of 27 GHz was achieved with a gain-bandwidth product of 120 GHz.

引用

页码：416 / 418

页数：3

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