65 GHz InGaAs/InAlGaAs/InP waveguide-integrated photodetectors for the 1.3-1.55 μm wavelength regime

We report on ultrafast waveguide-integrated metal-semiconductor-metal photodetectors based on low pressure metal organic chemical vapor deposition grown semiinsulating InP/InGaAs/InAlGaAs/InP layers. The vertically coupled detectors have an interned coupling efficiency of >90% at 1.3 and 1.55 mu m wavelength for detector lengths of 30 mu m. A 3 dB bandwidth of 65 GHz at 1.55 mu m wavelength is achieved by employing 0.3 mu m feature-size finger electrodes and an active layer thickness of ISO nm. Furthermore, we present results on high-performance devices with a buried waveguide structure fabricated by regrowth of InP:Fe. (C) 1999 American Institute of Physics. [S0003-6951(99)00703-2].