Oxide thickness variation induced threshold voltage fluctuations in decanano MOSFETs: a 3D density gradient simulation study

被引：15

作者：

Asenov, A ^{[1
]}

Kaya, S

Davies, JH

Saini, S

机构：

[1] Univ Glasgow, Dept Elect & Elect Engn, Device Modelling Grp, Glasgow G12 8LT, Lanark, Scotland

[2] NASA, Ames Res Ctr, Moffett Field, CA 94035 USA

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2000年 / 28卷 / 5-6期

关键词：

MOSFETs; scaling; interface; roughness; density gradient;

D O I：

10.1006/spmi.2000.0955

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We use the density gradient (DG) simulation approach to study, in 3D, the effect of local oxide thickness fluctuations on the threshold voltage of decanano MOSFETs in a statistical manner. A description of the reconstruction procedure for the random 2D surfaces representing the 'atomistic' Si-SiO2 interface variations is presented. The procedure is based on power spectrum synthesis in the Fourier domain acid can include either Gaussian or exponential spectra. The simulations show that threshold voltage variations induced by oxide thickness fluctuation become significant when the gate length of the devices become comparable to the correlation length of the fluctuations. The extent of quantum corrections in the simulations with respect to the classical case and the dependence of threshold variations on the oxide thickness are examined. (C) 2000 Academic Press.

引用

页码：507 / 515

页数：9

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