High efficiency n-ZnO/p-SiC heterostructure photodiodes grown by plasma-assisted molecular-beam epitaxy

被引：20

作者：

Alivov, YI ^{[1
]}

Özgür, Ü

Dogan, S

Johnstone, D

Avrutin, V

Onojima, N

Liu, C

Xie, J

Fan, Q

Morkoç, H

Ruterana, P

机构：

[1] Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA 23284 USA

[2] Ataturk Univ, Fac Arts & Sci, Dept Phys, TR-25240 Erzurum, Turkey

[3] ENSICAEN, CNRS, UMR 6176, SIFCOM, F-14050 Caen, France

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2005年 / 38卷 / 4-6期

关键词：

D O I：

10.1016/j.spmi.2005.08.054

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Heteroepitaxial n-ZnO films have been grown on commercial p-type 6H-SiC substrates by plasma-assisted molecular-beam epitaxy, and n-ZnO/p-SiC heterojunction mesa structures have been fabricated and their photoresponse properties have been studied. Current-voltage characteristics of the structures had a very good rectifying diode-like behavior with a leakage current less than 2 x 10(-4) A/cm(2) at -10 V, a breakdown voltage greater than 20 V, a forward turn-on voltage of similar to 5 V, and a forward Current of similar to 2 A/cm(2) at 8 V. Photosensitivity of the diodes was studied at room temperature and a photoresponsivity of as high as 0.045 A/W at -7.5 V reverse bias was observed for photon energies higher than 3.0 eV. (C) 2005 Elsevier Ltd. All rights reserved.

引用

页码：439 / 445

页数：7

共 17 条

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