Near-field spectroscopy of silicon dioxide thin films

被引：116

作者：

Zhang, L. M. ^{[1
]}

Andreev, G. O. ^{[2
]}

Fei, Z. ^{[2
]}

McLeod, A. S. ^{[2
]}

Dominguez, G. ^{[3
]}

Thiemens, M. ^{[3
]}

Castro-Neto, A. H. ^{[4
,5
]}

Basov, D. N. ^{[2
]}

Fogler, M. M. ^{[2
]}

机构：

[1] Boston Univ, Dept Phys, Boston, MA 02215 USA

[2] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

[3] Univ Calif San Diego, Dept Chem, La Jolla, CA 92093 USA

[4] Natl Univ Singapore, Graphene Res Ctr, Singapore 117542, Singapore

[5] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

来源：

PHYSICAL REVIEW B | 2012年 / 85卷 / 07期

关键词：

SURFACE-ENHANCED SPECTROSCOPY; ELASTIC LIGHT-SCATTERING; OPTICAL MICROSCOPY; SPHERE; SUBSTRATE; NANOSCOPY; PLASMONS; SCALE; PROBE; TIP;

D O I：

10.1103/PhysRevB.85.075419

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We analyze the results of scanning near-field infrared spectroscopy performed on thin films of a-SiO2 on Si substrate. The measured near-field signal exhibits surface-phonon resonances whose strength has a prominent thickness dependence in the range from 2 to 300 nm. These observations are compared with calculations in which the tip of the near-field infrared spectrometer is modeled either as a point dipole or an elongated spheroid. The latter model accounts for the antenna effect of the tip and gives a better agreement with the experiment. Possible applications of the near-field technique for depth profiling of layered nanostructures are discussed.

引用

页数：8

共 41 条

[11] Inhomogeneous electronic state near the insulator-to-metal transition in the correlated oxide VO2 [J].