Optically induced dynamics of muonium centers in Si studied via their precession signatures

被引：19

作者：

Fan, I. ^{[1
]}

Chow, K. H. ^{[1
]}

Hitti, B. ^{[5
]}

Scheuermann, R. ^{[4
]}

MacFarlane, W. A. ^{[3
]}

Mansour, A. I. ^{[1
]}

Schultz, B. E. ^{[1
]}

Egilmez, M. ^{[1
]}

Jung, J. ^{[1
]}

Lichti, R. L. ^{[2
]}

机构：

[1] Univ Alberta, Dept Phys, Edmonton, AB T6G 2G7, Canada

[2] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA

[3] Univ British Columbia, Dept Chem, Vancouver, BC V6T 1Z1, Canada

[4] Paul Scherrer Inst, CH-5232 Villigen, Switzerland

[5] TRIUMF, Vancouver, BC V6T 2A3, Canada

来源：

PHYSICAL REVIEW B | 2008年 / 77卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.77.035203

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We studied the influence of the optical excitation on three muonium centers Mu(T)(0), Mu(BC)(0), and Mu(BC)(+) in high resistivity silicon. These investigations were carried out on the spin precession signature of each center as a function of temperature. It is found that photoexcitation resulted in significant enhancements of the depolarization rates of the precession signals as the three muonium centers underwent interactions with photogenerated free carriers. The results are described by a three-state model involving transitions between Mu(T)(0), Mu(BC)(0), and Mu(BC)(+) as well as spin exchange processes.

引用

页数：9

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