Nature of charged muonium in GaAs with an applied electric field

被引：20

作者：

Schultz, BE ^{[1
]}

Chow, KH

Hitti, B

Salman, Z

Kreitzman, SR

Kiefl, RF

Lichti, RL

机构：

[1] Univ Alberta, Dept Phys, Edmonton, AB T6G 2J1, Canada

[2] TRIUMF, Vancouver, BC V6T 2A3, Canada

[3] Univ British Columbia, Dept Phys & Astron, Vancouver, BC V6T 1Z1, Canada

[4] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA

来源：

PHYSICAL REVIEW B | 2005年 / 72卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.72.033201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have identified the muonium signal that is enhanced by an electric field in semi-insulating GaAs at 10 K. Experiments were conducted with the electric field applied parallel and antiparallel to the incoming muon. For fields in the range approximate to 1-15 kV/cm in both directions the nuclear dipolar broadening of the muon spin precession signal at 1 T is consistent with that of positively charged muonium (i.e., Mu(+)). This is confirmed by muon-nuclear level crossing measurements at +/- 20 kV/cm which show a resonance signal identical to that of isolated Mu(+) seen previously in p-type GaAs. These measurements show by direct spectroscopic means that the electric field of either direction enhances the probability to form isolated Mu(+) in high resistivity GaAs and are in agreement with a model in which the electric field prevents the formation of neutral bond centered muonium.

引用

页数：4

共 15 条

[1] Avoided level crossing measurements of electric field enhanced diamagnetic states in gallium arsenide [J].

Chow, KH ;

Hitti, B ;

Eshchenko, DG ;

Storchak, VG ;

Kreitzman, SR ;

Brewer, JH .

PHYSICA B-CONDENSED MATTER, 2003, 326 (1-4) :157-159

[2] Muonium analog of hydrogen passivation:: Observation of the Mu+-Zn- reaction in GaAs -: art. no. 216403 [J].

Chow, KH ;

Hitti, B ;

Kiefl, RF ;

Lichti, RL ;

Estle, TL .

PHYSICAL REVIEW LETTERS, 2001, 87 (21) :216403-1

[3] Isolated positively charged muonium and the analog of hydrogen passivation [J].

Chow, KH .

PHYSICA B-CONDENSED MATTER, 2003, 326 (1-4) :145-150

[4] Diffusion and charge dynamics of negatively charged muonium in n-type GaAs [J].

Chow, KH ;

Hitti, B ;

Kiefl, RF ;

Dunsiger, SR ;

Lichti, RL ;

Estle, TL .

PHYSICAL REVIEW LETTERS, 1996, 76 (20) :3790-3793

[5]

Chow KH, 1998, SEMICONDUCT SEMIMET, V51, P137

[6] Electron transport to positive centers in GaAs [J].

Eshchenko, DG ;

Storchak, VG ;

Morris, GD .

PHYSICS LETTERS A, 1999, 264 (2-3) :226-231

[7] Influence of impurities on short range electron transport in GaAs [J].

Eshchenko, DG ;

Storchak, VG ;

Brewer, JH ;

Lichti, RL .

PHYSICAL REVIEW LETTERS, 2002, 89 (22) :226601-226601

[8] Excited muonium state in CdS [J].

Eshchenko, DG ;

Storchak, VG ;

Cottrell, SP ;

Cox, SFJ .

PHYSICAL REVIEW B, 2003, 68 (07)

[9] QUADRUPOLE INFLUENCE ON DIPOLAR-FIELD WIDTH FOR A SINGLE INTERSTITIAL IN A METAL CRYSTAL [J].

HARTMANN, O .

PHYSICAL REVIEW LETTERS, 1977, 39 (13) :832-835

[10] Frequency shifts and local spin susceptibility of muonium in heavily-doped Si and GaAs [J].

Hoffman, KL ;

Chow, KH ;

Kiefl, RF ;

Hitti, B ;

Estle, TL ;

Lichti, RL .

PHYSICA B-CONDENSED MATTER, 2003, 326 (1-4) :175-177

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