RHEED characterization of InAs/GaAs grown by MBE

被引：5

作者：

Cai, LC ^{[1
]}

Chen, H ^{[1
]}

Bao, CL ^{[1
]}

Huan, Q ^{[1
]}

Zhou, JM ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 197卷 / 1-2期

关键词：

heteroepitaxy; MBE; InAs; RHEED oscillation;

D O I：

10.1016/S0022-0248(98)00913-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A simple method is suggested to obtain reflection high-energy electron diffraction (RHEED oscillation of InAs layer grown on a GaAs substrate. The growth process of InAs epilayer as well as the relation between the growth mode and V/III flux ratios are studied by RHEED oscillation. We find that RHEED intensity oscillation exists in the range of flux ratios of V/III from 5.3 to 7.3 under the In-rich conditions and from 10.5 to 22.7 under the As-rich conditions. A step flow growth mode occurs in the range of critical flux ratios of V/III from 7.3 to 10.5. A rough surface is observed at higher flux ratios of V/III under In-rich conditions. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：364 / 367

页数：4

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