Highly reliable high-brightness GaN-based flip chip LEDs

被引：20

作者：

Chang, S. J. ^{[1
]}

Chen, W. S.

Shei, S. C.

Ko, T. K.

Shen, C. F.

Hsu, Y. P.

Chang, C. S.

Tsai, J. M.

Lai, W. C.

Lin, A. J.

机构：

[1] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Dept Elect Engn, Tainan 70101, Taiwan

[2] Natl Univ Tainan, Dept Elect Engn, Tainan 700, Taiwan

[3] Epitech Technol Corp, Hsin Shi 744, Taiwan

来源：

IEEE TRANSACTIONS ON ADVANCED PACKAGING | 2007年 / 30卷 / 04期

关键词：

flip chip (FC); GaN; ITO/Ni/Ag; light emitting diode (LED);

D O I：

10.1109/TADVP.2007.898510

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The properties of indium tin-oxide (ITO)/Ni films as transparent ohmic contacts of nitride-based flip chip (FC) light emitting diodes (LEDs) were studies. It was found that 300 degrees C rapid thermal annealed (RTA) ITO(15 nm)/Ni(1 nm) could provide good electrical and optical properties for FC LED applications. It was also found that 20-mA operation voltage and output power of the 465-nm FC LEDs with ITO/Ni/Ag reflective mirror were 3.16 V and 21 mW, respectively. Furthermore, it was found that output intensity of the proposed LED only decayed by 5% after 1200 h under 30-mA current injection at room temperature.

引用

页码：752 / 757

页数：6

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