High-Mobility Low-Voltage ZnO and Li-Doped ZnO Transistors Based on ZrO2 High-k Dielectric Grown by Spray Pyrolysis in Ambient Air

被引：209

作者：

Adamopoulos, George ^{[1
,2
]}

Thomas, Stuart ^{[1
,2
]}

Woebkenberg, Paul H. ^{[1
,2
]}

Bradley, Donal D. C. ^{[1
,2
]}

McLachlan, Martyn A. ^{[3
,4
]}

Anthopoulos, Thomas D. ^{[1
,2
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Dept Phys, London SW7 2BW, England

[2] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Ctr Plast Elect, London SW7 2BW, England

[3] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England

[4] Univ London Imperial Coll Sci Technol & Med, Ctr Plast Elect, London SW7 2AZ, England

来源：

ADVANCED MATERIALS | 2011年 / 23卷 / 16期

基金：

英国工程与自然科学研究理事会;

关键词：

THIN-FILM TRANSISTORS; GATE DIELECTRICS; TRANSPARENT; DEPOSITION; OXIDES; LAYER; TEMPERATURE; STABILITY; ZIRCONIUM; HFO2;

D O I：

10.1002/adma.201003935

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Sequential layers of the high-k dielectric ZrO2 and the electron transporting semiconductors ZnO and Li-doped ZnO are deposited onto conductive indium tin oxide electrodes using spray pyrolysis. With these structures, thin-film transistors are fabricated with operating voltages below 6 V and maximum electron mobilities on the order of 85 cm(2) V-1 s(-1).

引用

页码：1894 / +

页数：7

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