Formation of shallow acceptor states in the surface region of thin film diamond

被引:38
作者
Williams, OA
Whitfield, MD
Jackman, RB
Foord, JS
Butler, JE
Nebel, CE
机构
[1] UCL, London WC1E 7JE, England
[2] Univ Oxford, Oxford OX1 3QZ, England
[3] USN, Res Lab, Washington, DC 20375 USA
[4] Tech Univ Munich, Walter Schottky Inst, D-80469 Munich, Germany
关键词
D O I
10.1063/1.1345806
中图分类号
O59 [应用物理学];
学科分类号
摘要
Considerable interest exists in fabrication of electronic devices from thin film polycrystalline diamond. To date, doping this material to achieve good free carrier concentrations and mobilities at room temperature has proved difficult. In this letter we report low temperature Hall effect measurements made on diamond films subjected to a hydrogenation process, such that the near surface region becomes p type without the addition of conventional dopant atoms. High carrier concentrations and mobilities can be achieved. The change in carrier concentration within the temperature range 10-300 K does not change as expected for most films, actually increasing as the temperature falls. This effect could be related to the confinement of carriers at the surface caused by the dipole provoked by adsorbed hydrogen on the diamond. However, polished films display more conventional behavior in that the carrier concentration falls with falling temperature. (C) 2001 American Institute of Physics.
引用
收藏
页码:3460 / 3462
页数:3
相关论文
共 17 条
[1]   Cleaning thin-film diamond surfaces for device fabrication: An Auger electron spectroscopic study [J].
Baral, B ;
Chan, SSM ;
Jackman, RB .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (04) :2303-2307
[2]   Hypothesis on the conductivity mechanism in hydrogen terminated diamond films [J].
Denisenko, A ;
Aleksov, A ;
Pribil, A ;
Gluche, P ;
Ebert, W ;
Kohn, E .
DIAMOND AND RELATED MATERIALS, 2000, 9 (3-6) :1138-1142
[3]   THE ELECTRICAL-PROPERTIES AND DEVICE APPLICATIONS OF HOMOEPITAXIAL AND POLYCRYSTALLINE DIAMOND FILMS [J].
GILDENBLAT, GS ;
GROT, SA ;
BADZIAN, A .
PROCEEDINGS OF THE IEEE, 1991, 79 (05) :647-668
[4]   FABRICATION AND CHARACTERIZATION OF METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR UTILIZING DIAMOND SURFACE-CONDUCTIVE LAYER [J].
ITOH, M ;
KAWARADA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (9A) :4677-4681
[5]  
KAWARADA H, 1994, DIAM RELAT MATER, V57, P718
[6]   Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin films [J].
Koizumi, S ;
Kamo, M ;
Sato, Y ;
Ozaki, H ;
Inuzuka, T .
APPLIED PHYSICS LETTERS, 1997, 71 (08) :1065-1067
[7]   High-performance metal-semiconductor field effect transistors from thin-film polycrystalline diamond [J].
Looi, HJ ;
Pang, LYS ;
Wang, Y ;
Whitfield, MD ;
Jackman, RB .
DIAMOND AND RELATED MATERIALS, 1998, 7 (2-5) :565-568
[8]   High carrier mobility in polycrystalline thin film diamond [J].
Looi, HJ ;
Jackman, RB ;
Foord, JS .
APPLIED PHYSICS LETTERS, 1998, 72 (03) :353-355
[9]   An insight into the mechanism of surface conductivity in thin film diamond [J].
Looi, HJ ;
Pang, LYS ;
Molloy, AB ;
Jones, F ;
Foord, JS ;
Jackman, RB .
DIAMOND AND RELATED MATERIALS, 1998, 7 (2-5) :550-555
[10]  
Looi HJ, 1998, IEEE ELECTR DEVICE L, V19, P112, DOI 10.1109/55.663531