Anomalous grain boundary and carrier transport in cat-CVD poly-Si films

被引：12

作者：

Heya, A ^{[1
]}

He, AQ ^{[1
]}

Otsuka, N ^{[1
]}

Matsumura, H ^{[1
]}

机构：

[1] Japan Adv Inst Sci & Technol, Tatsunokuchi, Ishikawa 92312, Japan

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1998年 / 227卷

关键词：

cat-CVD; HW(hot-wire)-CVD; poly-Si; grain boundary; barrier height; mobility; transmission electron microscopy (TEM);

D O I：

10.1016/S0022-3093(98)00256-7

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Polycrystalline silicon (poly-Si) films are obtained at temperatures less than 400 degrees C by catalytic chemical vapor deposition (cat-CVD) method, often called 'hot-wire CVD' method. Structural properties of the cat-CVD poly-Si films are studied by Raman spectroscopy and high resolution transmission electron microscopy, along with carrier transport properties measured by the Van der Pauw method. It is found that the cat-CVD poly-Si films have a microstructure which consists of columnar crystalline grains with tens of nanometers diameter and a few nm thick amorphous layers surrounding the columnar grains. It is also found that the Hall mobilities of some samples are several-tens cm(2)/V s and the barrier heights at the grain boundaries become the order of 0.01 eV or less. These good carrier transport properties appear dependent on the grain boundary structure of the cat-CVD poly-Si films. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：1016 / 1020

页数：5

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