CATALYTIC CHEMICAL VAPOR-DEPOSITION METHOD TO PREPARE HIGH-QUALITY HYDROFLUORINATED AMORPHOUS-SILICON

被引：20

作者：

MATSUMURA, H

IHARA, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 11期

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D O I：

10.1063/1.342069

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：6505 / 6509

页数：5

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[1] BOND GC, 1962, CATALYSIS METALS, P149
[2] THE DEPOSITION OF SILICON FILMS BY PYROLYTIC DECOMPOSITION OF SIF2 GAS
JANAI, M
AFTERGOOD, S
WEIL, RB
PRATT, B
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (12) : 2660 - 2665
[3] CHEMICAL VAPOR-DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON
KURTZ, SR
PROSCIA, J
GORDON, RG
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) : 249 - 256
[4] A NEW HYDRO-FLUORINATED AMORPHOUS-SILICON PRODUCED BY USING INTERMEDIATE SPECIES SIF2
MATSUMURA, H
FURUKAWA, S
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 739 - 742
[5] AMORPHOUS-SILICON PRODUCED BY A NEW THERMAL CHEMICAL VAPOR-DEPOSITION METHOD USING INTERMEDIATE SPECIES SIF2
MATSUMURA, H
TACHIBANA, H
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 833 - 835
[6] HIGH-QUALITY AMORPHOUS-SILICON GERMANIUM PRODUCED BY CATALYTIC CHEMICAL VAPOR-DEPOSITION
MATSUMURA, H
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (11) : 804 - 805
[7] CATALYTIC CHEMICAL VAPOR-DEPOSITION (CTL-CVD) METHOD PRODUCING HIGH-QUALITY HYDROGENATED AMORPHOUS-SILICON
MATSUMURA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (12): : L949 - L951
[8] Matsumura H., 1985, 18TH P IEEE PHOT SPE, P1277
[9] MATSUMURA H, 1983, JPN J APPL PHYS S, V22, P523
[10] PREPARATION OF PHOTOCONDUCTIVE A-SIGE ALLOY BY GLOW-DISCHARGE
NOZAWA, K
YAMAGUCHI, Y
HANNA, J
SHIMIZU, I
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 533 - 536