Photoemission extended fine structure study of the SiO2/Si(111) interface

被引：59

作者：

Sieger, MT

Luh, DA

Miller, T

Chiang, TC

机构：

[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

[2] UNIV ILLINOIS,SEITZ MAT RES LAB,URBANA,IL 61801

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 77卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.77.2758

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

High-resolution Si 2p core level photoemission spectra of the SiO2/Si(111) system show chemically shifted components derived from individual oxidation states, which exhibit strong intensity modulations as a function of photon energy due to final-state diffraction. Analysis of these photoemission intensity modulations gives bond-length information specific to the individual suboxide. The results indicate that the interface is atomically abrupt.

引用

页码：2758 / 2761

页数：4

共 19 条

[1] THEORY OF ANGLE-RESOLVED PHOTOEMISSION EXTENDED FINE-STRUCTURE [J].

BARTON, JJ ;

ROBEY, SW ;

SHIRLEY, DA .

PHYSICAL REVIEW B, 1986, 34 (02) :778-791

[2] EXTENDED PHOTOEMISSION FINE-STRUCTURE ANALYSIS OF THE SI(111)-(7X7) SURFACE CORE LEVELS [J].

CARLISLE, JA ;

SIEGER, MT ;

MILLER, T ;

CHIANG, TC .

PHYSICAL REVIEW LETTERS, 1993, 71 (18) :2955-2958

[3] DIRECT PHOTOELECTRON-DIFFRACTION METHOD FOR ADSORBATE STRUCTURAL DETERMINATIONS [J].

FRITZSCHE, V ;

WOODRUFF, DP .

PHYSICAL REVIEW B, 1992, 46 (24) :16128-16134

[4]

Grunthaner F. J., 1986, Material Science Reports, V1, P65, DOI 10.1016/S0920-2307(86)80001-9

[5] THE LOCALIZATION AND CRYSTALLOGRAPHIC DEPENDENCE OF SI SUBOXIDE SPECIES AT THE SIO2/SI INTERFACE [J].

GRUNTHANER, PJ ;

HECHT, MH ;

GRUNTHANER, FJ ;

JOHNSON, NM .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) :629-638

[6] MICROSCOPIC STRUCTURE OF THE SIO2/SI INTERFACE [J].

HIMPSEL, FJ ;

MCFEELY, FR ;

TALEBIBRAHIMI, A ;

YARMOFF, JA ;

HOLLINGER, G .

PHYSICAL REVIEW B, 1988, 38 (09) :6084-6096

[7]

HOLL MMB, 1993, PHYS REV LETT, V71, P2441, DOI 10.1103/PhysRevLett.71.2441

[8] PROBING THE TRANSITION LAYER AT THE SIO2-SI INTERFACE USING CORE LEVEL PHOTOEMISSION [J].

HOLLINGER, G ;

HIMPSEL, FJ .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :93-95

[9] OXYGEN-CHEMISORPTION AND OXIDE FORMATION ON SI(111) AND SI(100) SURFACES [J].

HOLLINGER, G ;

HIMPSEL, FJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :640-645

[10] MULTIPLE-BONDING CONFIGURATIONS FOR OXYGEN ON SILICON SURFACES [J].

HOLLINGER, G ;

HIMPSEL, FJ .

PHYSICAL REVIEW B, 1983, 28 (06) :3651-3653

← 1 2 →