Structural investigation of sapphire surface after nitridation

被引：37

作者：

Hashimoto, T

Terakoshi, Y

Ishida, M

Yuri, M

Imafuji, O

Sugino, T

Yoshikawa, A

Itoh, K

机构：

[1] Matsushita Elect Corp, Elect Res Lab, Takatsuki, Osaka 56911, Japan

[2] Osaka Univ, Dept Elect Engn, Suita, Osaka 565, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

nitridation of sapphire; AFM; XPS; RHEED; GaN initial process;

D O I：

10.1016/S0022-0248(98)00255-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Nitridation process of a sapphire surface was investigated with atomic Force microscopy (AFM), reflection high-energy electron diffraction (RHEED), and X-ray photoelectron spectroscopy (XPS) in order to reveal a general nitridation mechanism. It was found that the nitridation process consists of two steps. First, inter-mixing between nitrogen-related species and sapphire surface occurs forming hydrogenated Al oxynitride. This step does not change the surface morphology significantly. Second, crystalline AIN islands are gradually formed by further nitridation of hydrogenated Al oxynitride, resulting in a very rough surface. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：254 / 258

页数：5

相关论文

共 9 条

[1] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].

AMANO, H ;

SAWAKI, N ;

AKASAKI, I ;

TOYODA, Y .

APPLIED PHYSICS LETTERS, 1986, 48 (05) :353-355

[2] EFFECTS OF NH3 NITRIDATION ON OXIDES GROWN IN PURE N2O AMBIENT [J].

BHAT, M ;

YOON, GW ;

KIM, J ;

KWONG, DL ;

ARENDT, M ;

WHITE, JM .

APPLIED PHYSICS LETTERS, 1994, 64 (16) :2116-2118

[3] Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers [J].

Grandjean, N ;

Massies, J ;

Leroux, M .

APPLIED PHYSICS LETTERS, 1996, 69 (14) :2071-2073

[4]

ISHIDA M, 1997, MAT RES SOC SPRING M

[5] EPITAXIAL-GROWTH OF ALN FILM WITH AN INITIAL-NITRIDING LAYER ON ALPHA-AL2O3 SUBSTRATE [J].

KAWAKAMI, H ;

SAKURAI, K ;

TSUBOUCHI, K ;

MIKOSHIBA, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (02) :L161-L163

[6] Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition [J].

Keller, S ;

Keller, BP ;

Wu, YF ;

Heying, B ;

Kapolnek, D ;

Speck, JS ;

Mishra, UK ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 1996, 68 (11) :1525-1527

[7] InGaN-based multi-quantum-well-structure laser diodes [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (1B) :L74-L76

[8] Nitridation process of sapphire substrate surface and its effect on the growth of GaN [J].

Uchida, K ;

Watanabe, A ;

Yano, F ;

Kouguchi, M ;

Tanaka, T ;

Minagawa, S .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (07) :3487-3491

[9] NITRIDATION EFFECTS OF SUBSTRATE SURFACE ON THE METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF INN ON SI AND ALPHA-AL2O3 SUBSTRATES [J].

YAMAMOTO, A ;

TSUJINO, M ;

OHKUBO, M ;

HASHIMOTO, A .

JOURNAL OF CRYSTAL GROWTH, 1994, 137 (3-4) :415-420