Plasma enhanced CVD silicon oxide films for integrated optic applications

被引：44

作者：

Domínguez, C

Rodríguez, JA

Muñoz, FJ

Zine, N

机构：

[1] Univ Autonoma Barcelona, Ctr Nacl Microelect, Dept Microsyst & Silicon Technol, E-08193 Barcelona, Spain

[2] Univ Havana, Fac Phys, Havana 10400, Cuba

来源：

VACUUM | 1999年 / 52卷 / 04期

关键词：

plasma enhanced chemical vapour deposited (PECVD); silicon oxide; film properties;

D O I：

10.1016/S0042-207X(98)00299-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Deposition and characterisation of amorphous plasma enhanced chemical vapour deposited (PECVD) silicon oxide films suitable for integrated optics applications is reported. Film properties such as refractive index, density, growth rate, thickness, bonded hydrogen content and total stress are correlated to deposition parameters such as gas flow ratio and substrate temperature. The composition of the layers depends mainly on the reactant gas flow ratio. For flow ratios greater than about 20, film properties were found to match the corresponding properties of silicon thermal oxide. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

收藏

页码：395 / 400

页数：6

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