Effect of precursor concentration and bath temperature on the growth of chemical bath deposited tin sulphide thin films

被引：58

作者：

Jayasree, Y. ^{[1
]}

Chalapathi, U. ^{[1
]}

Bhaskar, P. Uday ^{[1
]}

Raja, V. Sundara ^{[1
]}

机构：

[1] Sri Venkateswara Univ, Dept Phys, Solar Energy Lab, Tirupati 517502, Andhra Pradesh, India

来源：

APPLIED SURFACE SCIENCE | 2012年 / 258卷 / 07期

关键词：

SnS; Chemical bath deposition; Solar cell absorber; Triethanolamine; XRD; Band gap; ELECTROCHEMICAL DEPOSITION; ELECTRICAL-PROPERTIES; SNS;

D O I：

10.1016/j.apsusc.2011.10.124

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

SnS is a promising candidate for a low-cost, non-toxic solar cell absorber layer. Tin sulphide thin films have been deposited by chemical bath deposition technique from a solution containing stannous chloride, thioacetamide, ammonia and triethanolamine (TEA). The effects of concentration of tin salt, triethanolamine and bath temperature on the growth of tin sulphide films have been investigated in order to optimize the growth conditions to obtain tin monosulphide (SnS) films. SnS films obtained under optimized conditions were found to be polycrystalline in nature with orthorhombic structure. The optical band gap of these films was found to be 1.5 eV. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：2732 / 2740

页数：9

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