Manipulation of the structural and optical properties of InAs quantum dots by using various InGaAs structures

被引:29
作者
Kim, JS [1 ]
Lee, JH [1 ]
Hong, SU [1 ]
Han, WS [1 ]
Kwack, HS [1 ]
Lee, CW [1 ]
Oh, DK [1 ]
机构
[1] Elect & Telecommun Res Inst, Basic Res Lab, Taejon 305606, South Korea
关键词
D O I
10.1063/1.1621714
中图分类号
O59 [应用物理学];
学科分类号
摘要
The structural and optical properties of self-assembled InAs quantum dots (QDs) with various InGaAs structures were investigated by transmission electron microscopy (TEM) and photoluminescence (PL). The emission peak position of InAs QDs covered by a 6 nm In0.15Ga0.85As layer was 1.26 mum with PL linewidth of 31 meV, which is narrower than that of QDs in a GaAs matrix. By inserting a 1 nm In0.15Ga0.85As layer below the InAs QD layer with a 6 nm In0.15Ga0.85As overgrowth layer, the emission peak position was redshifted with larger energy-level spacing between the ground states and the first excited states compared to that of QDs with an In0.15Ga0.85As overgrowth layer only. By covering the InAs QDs on a 1 nm In0.15Ga0.85As layer with an 8 nm InxGa1-xAs layer having graded In composition, the emission peak position was 1.32 mum with relatively larger energy-level spacing and narrower PL linewidth compared to QDs covered by an In0.15Ga0.85As layer. The longer emission wavelength with relatively larger energy-level spacing was largely related to the change in the QD shape and size, especially the aspect ratio (height/width), which was confirmed by cross-sectional TEM images. (C) 2003 American Institute of Physics.
引用
收藏
页码:6603 / 6606
页数:4
相关论文
共 18 条
  • [1] Optical properties of multiple layers of self-organized InAs quantum dots emitting at 1.3 μm
    Bloch, J
    Shah, J
    Pfeiffer, LN
    West, KW
    Chu, SNG
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (16) : 2545 - 2547
  • [2] INAS/GAAS PYRAMIDAL QUANTUM DOTS - STRAIN DISTRIBUTION, OPTICAL PHONONS, AND ELECTRONIC-STRUCTURE
    GRUNDMANN, M
    STIER, O
    BIMBERG, D
    [J]. PHYSICAL REVIEW B, 1995, 52 (16) : 11969 - 11981
  • [3] Grundmann M, 1996, APPL PHYS LETT, V68, P979, DOI 10.1063/1.116118
  • [4] Application of atomic-force-microscope direct patterning to selective positioning of InAs quantum dots on GaAs
    Hyon, CK
    Choi, SC
    Song, SH
    Hwang, SW
    Son, MH
    Ahn, D
    Park, YJ
    Kim, EK
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (16) : 2607 - 2609
  • [5] Site-controlled InAs single quantum-dot structures on GaAs surfaces patterned by in situ electron-beam lithography
    Ishikawa, T
    Nishimura, T
    Kohmoto, S
    Asakawa, K
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (02) : 167 - 169
  • [6] JANG YD, 2002, P 11 INT S PHYS SEM, P7
  • [7] Growth of Si-doped InAs quantum dots and annealing effects on size distribution
    Kim, JS
    Yu, PW
    Leem, JY
    Lee, JI
    Noh, SK
    Kim, JS
    Kim, GH
    Kang, SK
    Ban, SI
    Kim, SG
    Jang, YD
    Lee, UH
    Yim, JS
    Lee, D
    [J]. JOURNAL OF CRYSTAL GROWTH, 2002, 234 (01) : 105 - 109
  • [8] Energy level control for self-assembled InAs quantum dots utilizing a thin AlAs layer
    Kim, JS
    Yu, PW
    Leem, JY
    Lee, JI
    Noh, SK
    Kim, JS
    Kim, SM
    Son, JS
    Lee, UH
    Yim, JS
    Lee, D
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (21) : 3247 - 3249
  • [9] KIM JS, 2002, APPL PHYS LETT, V80, P14
  • [10] Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth
    Ledentsov, NN
    Shchukin, VA
    Grundmann, M
    Kirstaedter, N
    Bohrer, J
    Schmidt, O
    Bimberg, D
    Ustinov, VM
    Egorov, AY
    Zhukov, AE
    Kopev, PS
    Zaitsev, SV
    Gordeev, NY
    Alferov, ZI
    Borovkov, AI
    Kosogov, AO
    Ruvimov, SS
    Werner, P
    Gosele, U
    Heydenreich, J
    [J]. PHYSICAL REVIEW B, 1996, 54 (12) : 8743 - 8750