Advances in InAlGaN laser diode technology towards the development of UV optical sources

被引：3

作者：

Kneissl, M ^{[1
]}

Treat, DW ^{[1
]}

Teepe, M ^{[1
]}

Miyashita, N ^{[1
]}

Johnson, NM ^{[1
]}

机构：

[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

来源：

NOVEL IN-PLANE SEMICONDUCTOR LASERS II | 2003年 / 4995卷

关键词：

UV; ultraviolet; GaN; InAlGaN; InGaN; quantum well; bioagent detection;

D O I：

10.1117/12.475786

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on ultraviolet (UV) InGaN and GaN multiple quantum well (MQW) laser diodes grown on c-plane sapphire substrates by metal organic chemical vapor deposition. By reducing the indium content in the InGaN/InAlGaN MQW, we have systematically pushed the room-temperature laser emission to a record low wavelength of 363.2nm. Pulsed threshold current densities around 5 kA/cm(2) have been achieved for laser diodes with emission wavelength between 368 nm and 378 nm. Light output powers greater than 400mW under pulsed current-injection conditions (pulse duration 500 ns, repetition frequency 1 kHz) and differential quantum efficiencies of 4.8% have been achieved. We also demonstrate room-temperature continuous-wave operation of ridge-waveguide devices with threshold currents of 85 mA for an emission wavelength of 377.8 nm and output power of more than 3 mW.

引用

页码：103 / 107

页数：5

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