Positron annihilation at proton-induced defects in 6H-SiC/SiC and 6H-SiC/SiO2/Si structures

被引：22

作者：

Barthe, MF

Henry, L

Corbel, C

Blondiaux, G

Saarinen, K

Hautojärvi, P

Hugonnard, E

Di Cioccio, L

Letertre, F

Ghyselen, B

机构：

[1] Ctr Etud & Rech Irradiat, CNRS, F-45071 Orleans, France

[2] Helsinki Univ Technol, Phys Lab, FIN-02150 Espoo, Finland

[3] CEA, LETI, Dept Microtechnol, F-38054 Grenoble, France

[4] SOITEC, F-190 Bernin, France

来源：

PHYSICAL REVIEW B | 2000年 / 62卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.62.16638

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Positron annihilation is used to detect vacancy-related defects in proton-implanted and Smart Cut 6H-SiC. The measurement of positron-electron pair momentum distribution as a function of depth shows that vacancy-related defects produced along the proton track and cavities formed in the region of the hydrogen peak survive in smart cut 6H-SiC even after 1300 degreesC annealing.

引用

页码：16638 / 16644

页数：7

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