Characteristics of Pd/InGaP Schottky diodes hydrogen sensors

被引：50

作者：

Lin, KW ^{[1
]}

Chen, HI

Chuang, HM

Chen, CY

Lu, CT

Cheng, CC

Liu, WC

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan

来源：

IEEE SENSORS JOURNAL | 2004年 / 4卷 / 01期

关键词：

barrier height; Fermi-level pinning; hydrogen sensors; initial heat of adsorption; Schottky diode;

D O I：

10.1109/JSEN.2003.820320

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pd/InGaP hydrogen sensors based on the metaloxide-semiconductor (MOS) and metal-semiconductor Schottky diodes have been fabricated and systematically studied. The effects of hydrogen adsorption on device performances such as the current-voltage characteristics, barrier height variation, hydrogen coverage, and heat of adsorption are investigated. The studied devices exhibit very wide hydrogen concentration detection regimes and remarkable hydrogen-sensing properties. Particularly, an extremely low hydrogen concentration of 15 ppm H-2/air at room temperature can be detected. In addition, under the presence of oxide layers in the studied MOS device structure, the enhancements of barrier height and high-temperature operating capability are observed. The initial heat of adsorption for Pd/oxide and Pd/semiconductor interface are calculated as 355 and 65.9 meV/atom, respectively. Furthermore, the considerably short response times are found in studied devices.

引用

页码：72 / 79

页数：8

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