Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-μm-wavelength regime

被引：66

作者：

Hofmann, M

Wagner, A

Ellmers, C

Schlichenmeier, C

Schäfer, S

Höhnsdorf, F

Koch, J

Stolz, W

Koch, SW

Rühle, WW

Hader, J

Moloney, JV

O'Reilly, EP

Borchert, B

Egorov, AY

Riechert, H

机构：

[1] Univ Marburg, Wissensch Zentrum Mat Wissensch, D-35032 Marburg, Germany

[2] Univ Marburg, Fachbereich Phys, D-35032 Marburg, Germany

[3] Univ Arizona, Arizona Ctr Math Sci, Tucson, AZ 85721 USA

[4] Univ Surrey, Dept Phys, Guildford GU2 5XH, Surrey, England

[5] Infineon Technol, Corp Res CPR 7, D-81730 Munich, Germany

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 20期

关键词：

D O I：

10.1063/1.1371963

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical gain spectra of (GaIn)(NAs)/GaAs quantum-well lasers operating in the 1.3-mum-emission-wavelength regime are measured and compared to those of a commercial (GaIn)(AsP)/InP structure. Good agreement of the experimental results with computed spectra of a microscopic many-body theory is obtained. Due to the contributions of a second confined subband, a spectrally broad gain region is expected for (GaIn)(NAs)/GaAs at elevated carrier densities. (C) 2001 American Institute of Physics.

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页码：3009 / 3011

页数：3

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