Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-μm-wavelength regime

被引:66
作者
Hofmann, M
Wagner, A
Ellmers, C
Schlichenmeier, C
Schäfer, S
Höhnsdorf, F
Koch, J
Stolz, W
Koch, SW
Rühle, WW
Hader, J
Moloney, JV
O'Reilly, EP
Borchert, B
Egorov, AY
Riechert, H
机构
[1] Univ Marburg, Wissensch Zentrum Mat Wissensch, D-35032 Marburg, Germany
[2] Univ Marburg, Fachbereich Phys, D-35032 Marburg, Germany
[3] Univ Arizona, Arizona Ctr Math Sci, Tucson, AZ 85721 USA
[4] Univ Surrey, Dept Phys, Guildford GU2 5XH, Surrey, England
[5] Infineon Technol, Corp Res CPR 7, D-81730 Munich, Germany
关键词
D O I
10.1063/1.1371963
中图分类号
O59 [应用物理学];
学科分类号
摘要
Optical gain spectra of (GaIn)(NAs)/GaAs quantum-well lasers operating in the 1.3-mum-emission-wavelength regime are measured and compared to those of a commercial (GaIn)(AsP)/InP structure. Good agreement of the experimental results with computed spectra of a microscopic many-body theory is obtained. Due to the contributions of a second confined subband, a spectrally broad gain region is expected for (GaIn)(NAs)/GaAs at elevated carrier densities. (C) 2001 American Institute of Physics.
引用
收藏
页码:3009 / 3011
页数:3
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